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  7. ME03HD10

电子元器件

ME03HD10 2.量产品

ME.png
Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between semiconductor materials and metal electrodes, e.g., Schottky barrier. They have lower forward voltage (VF) characteristics and shorter reverse recovery time (trr) than typical PN junction diodes, making them suitable for switching operation. However, the reverse current (IR) is larger than that of conventional PN diodes.
ME.png
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应用

  • 电源供应
  • 工业设备
  • 汽车（信息娱乐）
  • 汽车（行车安全）

规格

系列 ME
Outline SOD-128
outline_sod128.png
VRRM [V] 100V
Io [A] 3.0A
IFSM [A] 60.0A
IR [mA] 0.100mA
VFM [V] 0.85V
@IFM [A] 3.0A
工作温度范围 -55℃ ~ 150℃
Rth(j-c) [°C/W] 15 (j-l)°C/W
Connection type A
包装形式 Reel
每包数量 3000
质量 0.034g

捆包规格

包装形式 Reel
每包数量 3000
质量 0.034g

常见问题

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除SBD（肖特基二极管）产品的接合容量特性图形外都为最大值、保证值。接合容量特性图形所记录的为典型值 （TYP）。平均正向电流的额定曲线，划线的地方即为150℃值。

针对需进行回流焊的SMD贴装器件为对象设定MSL基准，京瓷功率器件产品的MSL等级都为1。（无需防湿捆包）

相关术语

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利用金属电极与半导体接触产生的电位势垒 (肖特基势垒) 的二极管。

分立式半导体 肖特基势垒二极管（SBD）
FRD/SBD 模块

可重复施加的反向电压的峰值/可在阳极与阴极间重复施加的反向电压的峰值。

在指定的条件下可在商用频率（50Hz/60Hz）下过载的最大平均电流。

Surface Mount Technology的缩写。将电子元器件安装在印刷基板上的方法之一。在印刷基板表面涂敷焊料，安装部件，然后通过回流炉熔化焊料的安装方法。

word_smd_c

存储（非工作时）的环境温度保证范围。

推荐系列

分立式半导体 肖特基势垒二极管（SBD）
MP (SBD)
MP (SBD)
Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between semiconductor materials and metal electrodes, e.g., Schottky barrier. They have lower forward voltage (VF) characteristics and shorter reverse recovery time (trr) than typical PN junction diodes, making them suitable for switching operation. However, the reverse current (IR) is larger than that of conventional PN diodes.
分立式半导体 肖特基势垒二极管（SBD）
ME (SBD)
ME (SBD)
Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between semiconductor materials and metal electrodes, e.g., Schottky barrier. They have lower forward voltage (VF) characteristics and shorter reverse recovery time (trr) than typical PN junction diodes, making them suitable for switching operation. However, the reverse current (IR) is larger than that of conventional PN diodes.
分立式半导体 肖特基势垒二极管（SBD）
MC (SBD)
MC (SBD)
Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between semiconductor materials and metal electrodes, e.g., Schottky barrier. They have lower forward voltage (VF) characteristics and shorter reverse recovery time (trr) than typical PN junction diodes, making them suitable for switching operation. However, the reverse current (IR) is larger than that of conventional PN diodes.

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