UCHD30A09 2.量产品
Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between semiconductor materials and metal electrodes, e.g., Schottky barrier. They have lower forward voltage (VF) characteristics and shorter reverse recovery time (trr) than typical PN junction diodes, making them suitable for switching operation. However, the reverse current (IR) is larger than that of conventional PN diodes.
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规格
| 系列 | TU |
|---|---|
| AEC-Q |
AEC-Q101 |
| Outline |
TO-263LP
|
| VRRM [V] | 90V |
| Io [A] | 30.0A |
| IFSM [A] | 250.0A |
| IR [mA] | 0.100mA |
| VFM [V] | 0.79V |
| PRRSM [W] | 195W |
| 工作温度范围 | -40℃ ~ 150℃ |
| Rth(j-c) [°C/W] | 1.50°C/W |
| Connection type | E |
| 包装形式 | Reel |
| 每包数量 | 2000 |
| 质量 | 0.590g |
捆包规格
| 包装形式 | Reel |
|---|---|
| 每包数量 | 2000 |
| 质量 | 0.590g |
技术文件
规格书 / 图纸
UCHD30A09-file.pdf (1535.33KB)
3D Models
STEP_LPTO263.zip (52.73KB)
环境资料
| RoHS指令対応状況 | Yes |
|---|
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